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features 1 of 12 optimum technology matching? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2006, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . inp hbt ldmos rf mems spf5122z 50mhz to 4000mhz, gaas phemt low noise mmic amplifier the spf5122z is a high performa nce phemt mmic lna designed for operation from 50mhz to 4000mhz. th e on-chip active bias network pro- vides stable current over temperatur e and process threshold voltage vari- ations. the spf5122z offers ultra-lo w noise figure and high linearity performance in a gain block configuration. its single-supply operation and integrated matching networks make im plementation remarkably simple. a high maximum input power specificatio n make it ideal for high dynamic range receivers. gain and nf versus frequency broadband application circuit (5v, 90ma) 1.0 4.0 7.0 10.0 13.0 16.0 19.0 22.0 25.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 frequency (ghz) gain (db) 0.00 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 nf (db) gain nf ? ultra-low noise figure=0.60db at 900mhz ? gain=18.9db at 900mhz ? high linearity: oip3=40.5dbm at 1900mhz ? channel power=13.4dbm (- 65dbc is95 acpr, 880mhz) ? p 1db =23.4dbm at 1900mhz ? single-supply operation: 5v at i dq =90ma ? flexible biasing options: 3-5v, adjustable current ? broadband internal matching applications ? cellular, pcs, w-cdma, ism, wimax receivers ? pa driver amplifier ? low noise, high linearity gain block applications ds110408 ? spf5122z 50mhz to 4000mhz, gaas phemt low noise mmic ampli- fier parameter specification unit condition min. typ. max. small signal power gain 17.2 18.9 20.2 db 0.9ghz 11.2 12.2 14.4 db 1.96ghz output power at 1db compression 20.8 22.8 dbm 0.9ghz 21.4 23.4 dbm 1.9ghz output third order intercept point 35.1 38.1 dbm 0.9ghz 37.2 40.5 dbm 1.9ghz noise figure 0.59 0.85 db 0.9ghz 0.65 0.9 db 1.9ghz input return loss 10 14.3 db 0.9 ghz 21 db 1.9 ghz output return loss 14 17 db 0.9ghz 13 db 1.9ghz reverse isolation 24.1 db 0.9ghz 18.4 db 1.9ghz device operating voltage 5.00 5.25 v device operating current 75 90 105 ma quiescent thermal resistance 65 c/w junction to lead test conditions: v d =5v, i dq =90ma, oip 3 tone spacing=1mhz, p out per tone=0dbm, z s =z l =50 ? , 25c, broadband application circuit
2 of 12 ds110408 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . spf5122z typical rf performance - broadband application circuit with v d =5v, i d =90ma 1. input rl can be improved in the 800mhz to 1000mhz band by adding a series inductor between the dc block and device input. typical rf performance - broadband application circuit with v d =3v, i d =58ma 1. input rl can be improved in the 800mhz to 1000mhz band by adding a series inductor between the dc block and device input. absolute maximum ratings parameter rating unit max device current (l d ) 120 ma max device voltage (v d )5.5v max rf input power 27 dbm max dissipated power 660 mw max junction temperature (t j ) 150 c operating temperature range (t l ) -40 to + 85 c max storage temperature -65 to +150 c esd rating - human body model (hbm) class 1b moisture sensitivity level (msl) msl 1 operation of this device beyond any one of these limits may cause permanent dam- age. for reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. bias conditions should also satisfy the following expression: i d v d <(t j -t l )/r th , j-l and t l =t lead parameter unit 0.1 ghz* 0.4 ghz 0.9 ghz 1.5 ghz 1.9 ghz 2.2 ghz 2.5 ghz 3.5 ghz 3.8 ghz small signal gain db 27.0 24.0 19.0 15.0 13.0 12.0 11.0 6.0 7.0 noise figure db 0.42 0.47 0.59 0.70 0.64 0.73 0.86 1.35 1.27 output ip3 dbm 33.0 36.0 38.0 39.5 40.5 41.0 41.5 40.5 41.5 output p1db dbm 22.3 22.7 23.0 23.2 23.4 23.7 23.9 22.2 22.9 input return loss db -9.5 -10.0 -14.5 -20.0 -21.0 -22.0 -22.5 -15.0 -11.5 output return loss db -29.0 -19.5 -17.0 -14.0 -13.0 -12.5 -12.5 -7.5 -15.5 reverse isolation db -32.0 -29.0 -24.0 -20.0 -18.5 -17.5 -16.5 -15.5 -13.5 test conditions: v d =5v, i dq =90ma, oip 3 tone spacing=1mhz, p out per tone=0dbm, t l =25c, z s =z l =50 ?? *bias tee data @ 100mhz parameter unit 0.1 ghz* 0.4 ghz 0.9 ghz 1.5 ghz 1.9 ghz 2.2 ghz 2.5 ghz 3.5 ghz 3.8 ghz small signal gain db 26.0 23.0 18.5 14.5 12.5 11.5 10.5 6.0 6.5 noise figure db 0.35 0.44 0.58 0.65 0.61 0.69 0.79 1.25 1.19 output ip3 dbm 31.5 33.0 34.5 36.0 36.5 37.0 37.5 37.0 37.5 output p1db dbm 18.8 18.9 19.1 19.4 19.9 20.2 20.1 18.9 19.2 input return loss db -8.0 -9.0 -13.0 -16.5 -18.5 -19.0 -19.0 -13.5 -10.0 output return loss db -26.0 -28.5 -23.5 -18.0 -16.5 -16.0 -15.5 -9.0 -14.0 reverse isolation db -31.0 -28.0 -23.0 -19.0 -17.5 -16.0 -15.0 -14.5 -12.5 test conditions: v d =3v, i dq =58ma, oip 3 tone spacing=1mhz, p out per tone=0dbm, t l =25c, z s =z l =50 ? , *bias tee data @ 100mhz caution! esd sensitive device. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. ex tended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical perfor- mance or functional operation of the devi ce under absolute maximum rating condi- tions is not implied. the information in this publication is believed to be accurate and reliable. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. rfmd green: rohs compliant per eu directive 2002/95/ec, halogen free per iec 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a fl ame retardant, and <2% antimony in solder.
3 of 12 ds110408 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . spf5122z typical rf performance - broadband application circuit with v d =5v, i d =90ma nf versus frequency 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 frequency (ghz) nf (db) 25c 85c oip 3 versus frequency (0 dbm/tone, 1 mhz spacing) 26.0 30.0 34.0 38.0 42.0 46.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 frequency (ghz) oip 3 (dbm) 25c -40c 85c p 1db versus frequency 17.0 19.0 21.0 23.0 25.0 27.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 frequency (ghz) p 1db (dbm) 25c -40c 85c device current versus voltage 0.0 20.0 40.0 60.0 80.0 100.0 120.0 140.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 v d (v) i d (ma) 25c -40c 85c
4 of 12 ds110408 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . spf5122z typical rf performance - broadband application circuit with v d =5v, i d =90ma s11 versus frequency -30.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 frequency (ghz) s11 (db) 25c -40c 85c s21 versus frequency 0.0 4.0 8.0 12.0 16.0 20.0 24.0 28.0 32.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 frequency (ghz) s21 (db) 25c -40c 85c s12 versus frequency -30.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 frequency (ghz) s12 (db) 25c -40c 85c s22 versus frequency -30.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 frequency (ghz) s22 (db) 25c -40c 85c
5 of 12 ds110408 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . spf5122z typical rf performance - broadband application circuit with v d =5v, i d =90ma oip 3 versus power (900 mhz, 1 mhz spacing) 26.0 30.0 34.0 38.0 42.0 46.0 0.0 3.0 6.0 9.0 12.0 15.0 output power per tone (dbm) oip 3 (dbm) -40c 25c 85c oip 3 versus power (1900 mhz, 1 mhz spacing) 26.0 30.0 34.0 38.0 42.0 46.0 0.0 3.0 6.0 9.0 12.0 15.0 output power per tone (dbm) oip 3 (dbm) 25c -40c 85c acp versus channel power @ 2140mhz -80.0 -70.0 -60.0 -50.0 -40.0 -30.0 5.0 7.0 9.0 11.0 13.0 15.0 17.0 channel power (dbm) acp (dbc) -40c 25c 85c system w cdma w ith 64 dpch source acp versus channel power @ 880mhz -90.0 -80.0 -70.0 -60.0 -50.0 -40.0 -30.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 channel power (dbm) acp (dbc) 25c -40c 85c 880mhz is95 source is-95 with 9 dpch source
6 of 12 ds110408 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . spf5122z typical rf performance - broadband application circuit with v d =3v, i d =58ma nf versus frequency 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 frequency (ghz) nf (db) 25c 85c oip 3 versus frequency (0 dbm/tone, 1 mhz spacing) 22.0 26.0 30.0 34.0 38.0 42.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 frequency (ghz) oip 3 (dbm) 25c -40c 85c p 1db versus frequency 12.0 14.0 16.0 18.0 20.0 22.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 frequency (ghz) p 1db (dbm) 25c -40c 85c
7 of 12 ds110408 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . spf5122z typical rf performance - broadband application circuit with v d =3v, i d =58ma s11 versus frequency -30.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 frequency (ghz) s11 (db) 25c -40c 85c s21 versus frequency 0.0 4.0 8.0 12.0 16.0 20.0 24.0 28.0 32.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 frequency (ghz) s21 (db) 25c -40c 85c s12 versus frequency -30.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 frequency (ghz) s12 (db) 25c -40c 85c s22 versus frequency -30.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 frequency (ghz) s22 (db) 25c -40c 85c
8 of 12 ds110408 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . spf5122z de-embedded device s-parameters (bias tee data) s11 versus frequency (5v 90ma) s22 versus frequency (5v 9 0ma) g max versus frequency (5v, 90ma) 0.0 5.0 10.0 15.0 20.0 25.0 30.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 frequency (ghz) g max , gain (db) gmax gain 0.0 0.2 1.0 2.0 5.0 5.0 0.2 0.5 1.0 2.0 5.0 0.2 0.5 1.0 2.0 5.0 4 gh z 2 gh z 1 g h z 50 mhz z 3 gh z 6 gh z 8 ghz 0.5 ghz ghz 0.0 0.2 0.5 2.0 5.0 5.0 0.2 0.5 1.0 2.0 5.0 0.2 0.5 1.0 2.0 5.0 4 g h z 2 gh z 1 gh z 50 mhz z 3 ghz ghz 8 gh z 0.5 ghz 6 gh z
9 of 12 ds110408 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . spf5122z de-embedded device s-parameters (bias tee data) s11 versus frequency (3v 58ma) s22 versus frequency (3v 5 8ma) g max versus frequency (3v, 58ma) 0.0 5.0 10.0 15.0 20.0 25.0 30.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 frequency (ghz) g max , gain (db) gmax gain 0.0 0.2 1.0 2.0 5.0 5.0 0.2 0.5 1.0 2.0 5.0 0.2 0.5 1.0 2.0 5.0 4 gh z 2 ghz 1 gh z 50 mhz 3 gh z 6 gh z 8 gh z 0.5 gh z 0.0 0.2 0.5 2.0 5.0 5.0 0.2 0.5 1.0 2.0 5.0 0.2 0.5 1.0 2.0 5.0 4 gh z 2 ghz 2 ghz 1 gh z 6 gh z 8 ghz 0.5 gh z
10 of 12 ds110408 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . spf5122z evaluation board assembly drawing application schematic (400mhz to 3000mhz) evaluation board bill of materials (bom) (400mhz to 3000mhz) c1 ajb104klrh, rohm, 0.1uf c2 mch185a101jk, rohm, 100 pf c3 mch185a101jk, rohm, 100 pf c4 mch185a101jk, rohm, 100 pf l1 ll1608-fsr15j, toko, 150nh rf out rf in vs 150nh 0.1uf 100pf 100pf epad 100pf spf5122z
11 of 12 ds110408 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . spf5122z part identification suggested pad layout (dimensions in in ches) package drawing dimensions in millimeters refer to drawing posted at www.rfmd.com for tolerances. pin names and description pin function description 1n/a ground or no-connect. no connection internal 2rf in rf input, dc coupled and matched to 50 ? . an external dc block is required. 3n/a ground or no-connect. no connection internal 4n/a ground or no-connect. no connection internal 5n/a ground or no-connect. no connection internal 6n/a ground or no-connect. no connection internal 7rf out/bias rf output, bias applied thro ugh this pin. matched to 50 ? . 8n/a ground or no-connect. no connection internal epad gnd epad must be conductively attached to rf and dc ground. 51z spf pin 1 designation (top view) 2 1 3 4 7 8 6 5 0 . 0057 0 . 0088 0 . 0 2 95 ? 0.0120 012 ? 0 . 0 2 00 0 . 0337
12 of 12 ds110408 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . spf5122z ordering information part number description spf5122z 7" reel with 3000 pieces spf5122zsq sample bag with 25 pieces spf5122zsr 7" reel with 100 pieces SPF5122ZPCK1 400mhz to 3000mhz pcba with 5-piece sample bag

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